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6R

型号:BZX38450-C1V8;Package:SC-76;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:BZX38450-C1V8-Q;Package:SOD323;Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:MMBFJ112;Package:SOT-233L;N-Channel Switch

Features •ThisDeviceisDesignedforLowLevelAnalogSwitching,Sample andHoldCircuitsandChopperStabilizedAmplifiers •SourcedfromProcess51 •Source&DrainareInterchangeable •ThesearePb−FreeDevices

ONSEMION Semiconductor

安森美半导体安森美半导体公司

6R

型号:MMBFJ112;Package:SOT-23;N-Channel Switch

Features •Thisdeviceisdesignedforlowlevelanalogswitching, sampleandholdcircuitsandchopperstabilizedamplifiers •SourcedfromProcess51. •Source&Drainareinterchangeable.

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

6R

型号:NHUMD13;Package:SOT363;80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:NHUMD13;Package:SC-88;80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD102.247NH

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:NX138BKM;Package:SOT883;60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006-3 (SOT883)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtec

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:PESD2CAN;Package:SOT23;CAN bus ESD protection diode

1.1Generaldescription PESD2CANinasmallSOT23Surface-MountedDevice(SMD)plasticpackagedesigned toprotecttwoautomotiveControllerAreaNetwork(CAN)buslinesfromthedamage causedbyElectroStaticDischarge(ESD)andothertransients. 1.2Featuresandbenefits Max.peakpulsep

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

6R

型号:TCK22972G;Package:WCSP6E;2A, 25mΩ Load Switch IC with Slew Rate Control Driver

TheTCK2292xGandTCK2297xGareloadswitchICsforpowermanagementwithslewratecontroldriverfeaturingwideinput voltageoperationfrom1.1to5.5V.SwitchONresistanceisonly25mΩ typicalat5.0V,-0.5Aloadconditionandthesefeatureaslewratecontrol driver.TCK2292xGhasout

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

6R

型号:UPD5729T6J-E4;MOS ANALOG INTEGRATED CIRCUIT

FEATURES •LowNoise:NV=−99dBVTYP.@VDD=3V,Cin=3pF,RL=2.2kΩ •HighGain:GV=+6dBTYP.@VDD=3V,Cin=3pF,RL=2.2kΩ •LowConsumptionCurrent:IDD=200μATYP.@VDD=3V,RL=2.2kΩ •3-pinthinlead-lessminimold(1.2×1.0×0.33mm)

RENESASRenesas Technology Corp

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
Nexperia(安世)
24+
SOD323
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
询价
24+
N/A
58000
一级代理-主营优势-实惠价格-不悔选择
询价
NEXPERIA
24+
con
10000
查现货到京北通宇商城
询价
NEXPERIA
24+
con
35960
查现货到京北通宇商城
询价
Nexperia
2024
39950
全新、原装
询价
更多6R供应商 更新时间2025-7-30 16:25:00