BZX38450-C1V8

Marking：6R；Package：SC-76；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

BZX38450-C1V8-Q

Marking：6R；Package：SOD323；Low-current voltage regulator diodes

1.Generaldescription Low-currentvoltageregulatordiodesinasmallSOD323(SC-76)Surface-MountedDevice(SMD) plasticpackage. 2.Featuresandbenefits •Totalpowerdissipation:≤300mW •Toleranceseries:approximately±5 •Workingvoltagerange:nominal1.8Vto10V •Specifie

MMBFJ112

Marking：6R；Package：SOT-233L；N-Channel Switch

Features •ThisDeviceisDesignedforLowLevelAnalogSwitching,Sample andHoldCircuitsandChopperStabilizedAmplifiers •SourcedfromProcess51 •Source&DrainareInterchangeable •ThesearePb−FreeDevices

MMBFJ112

Marking：6R；Package：SOT-23；N-Channel Switch

Features •Thisdeviceisdesignedforlowlevelanalogswitching, sampleandholdcircuitsandchopperstabilizedamplifiers •SourcedfromProcess51. •Source&Drainareinterchangeable.

NHUMD13

Marking：6R；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Featuresandbenefits •100mAoutputcurrentcapability •Highbreakdownvoltage •Built-inresistors •Simplifiescircuitdesign •Reducescomponentcount •Reducespickandplacecosts •AEC-Q101qualified

NHUMD13

Marking：6R；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1.Generaldescription NPN/PNPResistor-EquippeddoubleTransistors(RET)familyinaverysmallSOT363(SC-88) Surface-MountedDevice(SMD)plasticpackage. Table1.Productoverview TypenumberR1R2Package kΩkΩNexperiaJEITA NPN/NPN complement: PNP/PNP complement: NHUMD102.247NH

NX138BKM

Marking：6R；Package：SOT883；60 V, N-channel Trench MOSFET

1.Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaleadlessultrasmallDFN1006-3 (SOT883)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. 2.Featuresandbenefits •Lowthresholdvoltage •Veryfastswitching •TrenchMOSFETtec

PESD2CAN

Marking：6R；Package：SOT23；CAN bus ESD protection diode

1.1Generaldescription PESD2CANinasmallSOT23Surface-MountedDevice(SMD)plasticpackagedesigned toprotecttwoautomotiveControllerAreaNetwork(CAN)buslinesfromthedamage causedbyElectroStaticDischarge(ESD)andothertransients. 1.2Featuresandbenefits Max.peakpulsep

TCK22972G

Marking：6R；Package：WCSP6E；2A, 25mΩ Load Switch IC with Slew Rate Control Driver

TheTCK2292xGandTCK2297xGareloadswitchICsforpowermanagementwithslewratecontroldriverfeaturingwideinput voltageoperationfrom1.1to5.5V.SwitchONresistanceisonly25mΩ typicalat5.0V,-0.5Aloadconditionandthesefeatureaslewratecontrol driver.TCK2292xGhasout

UPD5729T6J-E4

Marking：6R；MOS ANALOG INTEGRATED CIRCUIT

FEATURES •LowNoise:NV=−99dBVTYP.@VDD=3V,Cin=3pF,RL=2.2kΩ •HighGain:GV=+6dBTYP.@VDD=3V,Cin=3pF,RL=2.2kΩ •LowConsumptionCurrent:IDD=200μATYP.@VDD=3V,RL=2.2kΩ •3-pinthinlead-lessminimold(1.2×1.0×0.33mm)