丝印：6R；Package：X2-DFN1010-4；300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Description The AP7343 is a low dropout regulator with high output voltage accuracy, low RDS(ON), high PSRR, low output noise and low quiescent current. This regulator is based on a CMOS process. The AP7343 includes a voltage reference, error amplifier, current limit circuit and an enable input

文件：1.3022 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：6R；Package：SOT25；300mA HIGH PSRR LOW NOISE LDO WITH ENABLE

Description The AP7343 is a low dropout regulator with high output voltage accuracy, low RDS(ON), high PSRR, low output noise and low quiescent current. This regulator is based on a CMOS process. The AP7343 includes a voltage reference, error amplifier, current limit circuit and an enable input

文件：1.3022 Mbytes 页数：18 Pages

DIODES

美台半导体

丝印：6R；Package：SC-76；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：234.92 Kbytes 页数：10 Pages

NEXPERIA

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丝印：6R；Package：SOD323；Low-current voltage regulator diodes

1. General description Low-current voltage regulator diodes in a small SOD323 (SC-76) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Total power dissipation: ≤ 300 mW • Tolerance series: approximately ± 5 • Working voltage range: nominal 1.8 V to 10 V • Specifie

文件：235.89 Kbytes 页数：10 Pages

NEXPERIA

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丝印：6R；Package：SOT-23；N-Channel Switch

Features • This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers • Sourced from Process 51. • Source & Drain are interchangeable.

文件：101.26 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

丝印：6R；Package：SOT-233L；N-Channel Switch

Features • This Device is Designed for Low Level Analog Switching, Sample and Hold Circuits and Chopper Stabilized Amplifiers • Sourced from Process 51 • Source & Drain are Interchangeable • These are Pb−Free Devices

文件：450.3 Kbytes 页数：11 Pages

ONSEMI

安森美半导体

丝印：6R；Package：SC-88；80 V, 100 mA NPN/PNP resistor-equipped double transistors

1. General description NPN/PNP Resistor-Equipped double Transistors (RET) family in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number R1 R2 Package kΩ kΩ Nexperia JEITA NPN/NPN complement: PNP/PNP complement: NHUMD10 2.2 47 NH

文件：377.26 Kbytes 页数：20 Pages

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丝印：6R；Package：SOT363；80 V, 100 mA NPN/PNP resistor-equipped double transistors

Features and benefits • 100 mA output current capability • High breakdown voltage • Built-in resistors • Simplifies circuit design • Reduces component count • Reduces pick and place costs • AEC-Q101 qualified

文件：377.23 Kbytes 页数：20 Pages

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丝印：6R；Package：SOT883；60 V, N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Very fast switching • Trench MOSFET tec

文件：280.6 Kbytes 页数：14 Pages

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丝印：6R；Package：SOT23；CAN bus ESD protection diode

1.1 General description PESD2CAN in a small SOT23 Surface-Mounted Device (SMD) plastic package designed to protect two automotive Controller Area Network (CAN) bus lines from the damage caused by ElectroStatic Discharge (ESD) and other transients. 1.2 Features and benefits  Max. peak pulse p

文件：703.9 Kbytes 页数：13 Pages

NEXPERIA

安世