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IPA60R330P6

丝印:6R330P6;Package:PG-TO220FullPAK;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件:3.09082 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPB60R330P6

丝印:6R330P6;Package:PG-TO263;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件:3.09082 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPP60R330P6

丝印:6R330P6;Package:PG-TO220;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件:3.09082 Mbytes 页数:19 Pages

INFINEON

英飞凌

IPW60R330P6

丝印:6R330P6;Package:PG-TO247;Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件:3.09082 Mbytes 页数:19 Pages

INFINEON

英飞凌

6R330P6

Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件:3.09082 Mbytes 页数:19 Pages

INFINEON

英飞凌

详细参数

  • 型号:

    6R330P6

  • 制造商:

    Infineon Technologies AG

  • 功能描述:

    COOL MOS - Rail/Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
2447
TO-247
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
询价
INFINEON/英飞凌
2022+
TO-247
50000
原厂代理 终端免费提供样品
询价
INFINEON
1515+
TO-247
15
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
INFINEON/英飞凌
23+
TO-247
11220
英飞凌优势原装IC,高效BOM配单。
询价
INFINEON
23+
TO-247
8000
只做原装现货
询价
Infineon(英飞凌)
21+
TO-247
15
原装现货,假一罚十
询价
INFINEON
23+
TO-247
7000
询价
INFINEON
24+
TO-247
8500
原厂原包原装公司现货,假一赔十,低价出售
询价
Infineon
原厂封装
9800
原装进口公司现货假一赔百
询价
INFINEON
22+
TO-247
20000
公司只做原装 品质保障
询价
更多6R330P6供应商 更新时间2026-1-21 15:01:00