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型号	下载订购	功能描述	制造商上传企业	LOGO
IPA60R330P6	文件：3.09082 Mbytes Page：19 Pages	丝印：6R330P6；Package：PG-TO220FullPAK；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi 文件：3.09082 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPB60R330P6	文件：3.09082 Mbytes Page：19 Pages	丝印：6R330P6；Package：PG-TO263；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi 文件：3.09082 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPP60R330P6	文件：3.09082 Mbytes Page：19 Pages	丝印：6R330P6；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi 文件：3.09082 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
IPW60R330P6	文件：3.09082 Mbytes Page：19 Pages	丝印：6R330P6；Package：PG-TO247；Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi 文件：3.09082 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon
6R330P6	文件：3.09082 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi 文件：3.09082 Mbytes 页数：19 Pages	Infineon 英飞凌	Infineon

详细参数

型号：
6R330P6
制造商：
Infineon Technologies AG
功能描述：
COOL MOS - Rail/Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市威尔健半导体有限公司	IPA60R330P6	INFINEON/英飞凌	23+	TO-220	50000	全新原装正品现货,支持订货	询价
贸泽芯城（深圳）电子科技有限公司	IPA60R330P6	INFINEON/英飞凌	23+	TO-220	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	IPA60R330P6	INFINEON	16+	TO-220	20	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市福安瓯科技有限公司	IPA60R330P6	INFINEON/英飞凌	23+	TO-220	11220	英飞凌优势原装IC,高效BOM配单。	询价
深圳市河锋鑫科技有限公司	IPA60R330P6	INFINEON	22+	TO-220	8000	终端可免费供样,支持BOM配单	询价
深圳市能元时代电子有限公司	IPA60R330P6	INFINEON	23+	TO-220	12800	##公司主营品牌长期供应100%原装现货可含税提供技术	询价
深圳市得捷芯城科技有限公司	IPA60R330P6	INFINEON/英飞凌	24+	NA/	45	优势代理渠道,原装正品,可全系列订货开增值税票	询价
深圳市安富世纪电子有限公司	IPA60R330P6	ADI	23+	TO-220	8000	只做原装现货	询价
深圳市睿芯铭科技有限公司	IPA60R330P6	Infineon(英飞凌)	21+	TO-220	55	原装现货,假一罚十	询价
天津市博通航睿技术有限公司	IPA60R330P6	ADI	23+	TO-220	7000		询价

更多6R330P6供应商更新时间2025-9-21 11:00:00

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