丝印：6R330P6；Package：PG-TO220；Metal Oxide Semiconductor Field Effect Transistor

Description CoolMOS™ is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. Features • Increased MOSFET dv/dt ruggedness • Extremely low losses due to very low FOM Rdson^Qg and Eoss • Very hi

文件：3.09082 Mbytes 页数：19 Pages

INFINEON

英飞凌

N-Channel MOSFET Transistor

• DESCRIPTION • Provide all benefits of a fast switching super junction MOS while not sacrificing ease of use • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.33Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust de

文件：338.2 Kbytes 页数：2 Pages

ISC

无锡固电

Metal Oxide Semiconductor Field Effect Transistor

文件：3.09082 Mbytes 页数：19 Pages

INFINEON

英飞凌

500 V-950 V CoolMOS™ N 沟道功率 MOSFET

英飞凌 CoolMOS ™ P6 超结 MOSFET 系列旨在实现更高的系统效率，同时易于设计。CoolMOS ™ P6 缩小了专注于提供终极性能的技术与更注重易用性的技术之间的差距。 • 降低栅极电荷 (Q g)\n• 提高 V th\n• 良好的体二极管耐用性\n• 优化的集成 R g\n• 从 50V/ns 开始改善 dv/dt\n• CoolMOS ™品质，拥有超过 12 年的超结技术制造经验;

Infineon

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：3.09082 Mbytes 页数：19 Pages

INFINEON

英飞凌