IPA60R330P6数据表ic资料批发供应无锡固电-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
IPA60R330P6	文件：3.09082 Mbytes Page：19 Pages	Metal Oxide Semiconductor Field Effect Transistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPA60R330P6	文件：270.14 Kbytes Page：2 Pages	Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220FPackage •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.33Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplicati	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPP60R330P6	文件：338.2 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IIPW60R330P6	文件：335.37 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB60R330P6	文件：189.06 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPB60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPB60R330P6	文件：33.26 Kbytes Page：1 Pages	MaterialContentDataSheet	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPP60R330P6	文件：338.2 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •ProvideallbenefitsofafastswitchingsuperjunctionMOSwhilenot sacrificingeaseofuse •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.33Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustde	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPP60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPW60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPW60R330P6	文件：335.37 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRITION •Fastswitching •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤330mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司
IPW60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司
IPX60R330P6	文件：3.09082 Mbytes Page：19 Pages	MetalOxideSemiconductorFieldEffectTransistor Description CoolMOS™isarevolutionarytechnologyforhighvoltagepowerMOSFETs,designedaccordingtothesuperjunction(SJ)principleandpioneeredbyInfineonTechnologies. Features •IncreasedMOSFETdv/dtruggedness •ExtremelylowlossesduetoverylowFOMRdson^QgandEoss •Veryhi	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司

详细参数

型号：
IPA60R330P6
制造商：
Infineon Technologies AG
功能描述：
COOL MOS - Rail/Tube

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市纳艾斯科技有限公司	IPA60R330P6	INFINEO	2020+	TO-220	80000	只做自己库存,全新原装进口正品假一赔百,可开13%增	询价
深圳市汇莱威科技有限公司	IPA60R330P6	INFINEON/英飞凌		TO-220	265209	假一罚十原包原标签常备现货!	询价
深圳市振芯物联科技有限公司	IPA60R330P6	INFINEON	22+	TO-220	32350	原装正品假一罚十公司现货	询价
深圳市威尔健半导体有限公司	IPA60R330P6	INFINEON/英飞凌	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳市安富世纪电子有限公司	IPA60R330P6	INFINEON	21+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	IPA60R330P6	INFINEON/英飞凌	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市鹏锦翔科技有限公司二部	IPA60R330P6	INFINEON	19+ 20+	TO-220	32350	深圳存库原装现货	询价
深圳市环球伟业电子有限公司	IPA60R330P6	Infineon/Infineon Technologies	21+	TO-220	55	优势代理渠道,原装正品,可全系列订货开增值税票	询价
贸泽芯城（深圳）电子科技有限公司	IPA60R330P6	INFINEON/英飞凌	21+ROHS	TO-220	10000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市威雅利发展有限公司	IPA60R330P6	INFINEON	16+	TO-220	20	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

更多IPA60R330P6供应商更新时间2024-4-27 15:22:00

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