IPX60R125C6

Marking：6R125C6；Package：PG-TO247；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtremelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcomutationruggedness *Easytoues/drive *JEDECqualified,Pb-freeplating,Halogenfree

IPX60R380C6

Marking：6R380C6；Package：PG-TO252；MOSFET Metal Oxide Semiconductor Field Effect Transistor

Features *ExtermelylowlossesduetoverylowFOMRdsonQgandEoss *Veryhighcommutationruggedness *Easytouse/drive,Pb-freeplating,Halogenfree *FullyqualifiedaccordingtoJEDECforIndustrialApplications

LMR43606RS3RPERQ1

Marking：6R3Q；Package：VQFN-HR；LMR43606-Q1, 36V, 0.6A, Automotive Buck Converter With 2.5μA IQ at 150°C TJMAX in 4mm2 HotRod™ QFN

1Features •AEC-Q100-qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Greaterthan85efficiencyat1mA •Miniaturedesignsizeandlowcomponentcost –2mm×2m

LMR43606RS5RPERQ1

Marking：6R5Q；Package：VQFN-HR；LMR43606-Q1, 36V, 0.6A, Automotive Buck Converter With 2.5μA IQ at 150°C TJMAX in 4mm2 HotRod™ QFN

1Features •AEC-Q100-qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Greaterthan85efficiencyat1mA •Miniaturedesignsizeandlowcomponentcost –2mm×2m

PESD2CAN

Marking：6RT；Package：SOT-23；250 W peak pulse power (tp =8/20μs)

Features 250Wpeakpulsepower(tp=8/20μs) Bidirectionalconfigurations Solid-statesilicon-avalanchetechnology Lowclampingvoltage Lowleakagecurrent IEC61000-4-2±30kVcontact±30kVair IEC61000-4-4(EFT)40A(5/50ns) IEC61000-4-5(Lightning)5A(8/20μs) Dataline Networks App

PSMN6R1-40HL

Marking：6R1L40H；Package：LFPAK56D；N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DuallogiclevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Applica

PSMN6R8-40HS

Marking：6R8S40H；Package：LFPAK56D；N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology

Generaldescription DualstandardlevelN-channelMOSFETinanLFPAK56D(DualPower-SO8)packageusing TrenchMOStechnology. Featuresandbenefits •DualMOSFET •Repetitiveavalancherated •HighreliabilityLFPAK56Dpackage •Copper-clip,solderdieattach •Qualifiedto175°C Appl

BPSC000606306R2MS0

Marking：6R2；This specification applies to SMD Shielded Power Choke

BPSC000606306R8MS0

Marking：6R8；This specification applies to SMD Shielded Power Choke

BWVS008080406R8M00

Marking：6R8；This specification applies to Wire Wound Power Inductors