600V 0.9(ohm) N-channel MOSFET

文件：1.14025 Mbytes 页数：10 Pages

MGCHIP

丝印：60R042D1；Package：PG-DSO-20-85；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：573.53 Kbytes 页数：16 Pages

INFINEON

英飞凌

丝印：60R042D1；Package：PG-DSO-20-87；600V CoolGaN™ enhancement-mode Power Transistor

Features • Enhancement mode transistor – Normally OFF switch • Ultra fast switching • No reverse-recovery charge • Capable of reverse conduction • Low gate charge, low output charge • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD

文件：638.14 Kbytes 页数：16 Pages

INFINEON

英飞凌

丝印：60R042D1；Package：PG-HSOF-8-3；600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：553.39 Kbytes 页数：16 Pages

INFINEON

英飞凌

丝印：60R037C8；Package：PG-HDSOP-10；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.22 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：60R007C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.2277 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：60R015F7；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：1.25691 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：60R016C8；Package：PG-HDSOP-22；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.23931 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：60R017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 17mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.2665 Mbytes 页数：14 Pages

INFINEON

英飞凌

丝印：60R020F7；Package：PG-HDSOP-22；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Potential applications Suitable for Soft S

文件：1.28851 Mbytes 页数：14 Pages

INFINEON

英飞凌