丝印：60R010S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 10mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK bottom side cooling package is MSL1

文件：1.37534 Mbytes 页数：14 Pages

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丝印：60R017S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 17mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK bottom side cooling package is MSL1

文件：1.37862 Mbytes 页数：14 Pages

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丝印：60R040S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 40mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK bottom side cooling package is MSL1

文件：1.38349 Mbytes 页数：14 Pages

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丝印：60R016C8；Package：PG-HSOF-8；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.40138 Mbytes 页数：14 Pages

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丝印：60R022S7；Package：PG-HSOF-8；600V CoolMOS짧 SJ S7 Power Device

MOSFET 600V CoolMOS™ SJS7 Power Device IPT60R022S7 enables the best price performance for low frequency switching applications. CoolMOS™ S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS™ S7 is optimized for “static switching” and high

文件：1.10033 Mbytes 页数：14 Pages

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丝印：60R024C8；Package：PG-HSOF-8；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.35096 Mbytes 页数：16 Pages

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丝印：60R037C8；Package：PG-HSOF-8；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.38326 Mbytes 页数：14 Pages

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丝印：60R016C8；Package：PG-TO247-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.42123 Mbytes 页数：14 Pages

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丝印：60R024F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：974.05 Kbytes 页数：14 Pages

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丝印：60R024C8；Package：PG-TO247-3；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.12544 Mbytes 页数：15 Pages

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