丝印：60R037C8；Package：PG-TO247-3；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.40466 Mbytes 页数：14 Pages

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丝印：60R037CS；Package：PG-TO247-3；600V CoolMOSª CSFD Power Transistor

Features • Fast body diode • Industry-leading reverse recovery charge (Qrr) • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Cost optimization

文件：1.03155 Mbytes 页数：14 Pages

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丝印：60R016C8；Package：PG-TO247-4；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.2472 Mbytes 页数：14 Pages

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丝印：60R024C8；Package：PG-TO247-4；MOSFET 600V CoolMOS™ CM8 Power Transistor

Features • Best‑In‑Class SJ Mosfet Performance • Address broad hard and soft switching applications with outstanding commutation ruggedness • Integrated fast body diode and ESD protection • .XT interconnection technology for best‑in‑class thermal performance Benefits • Provides the best p

文件：1.02222 Mbytes 页数：16 Pages

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丝印：60R037C8；Package：PG-TO247-4；600VCoolMOSªCM8PowerTransistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroughlowringingtendencyandusage  acrossP

文件：1.2297 Mbytes 页数：14 Pages

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丝印：60R037C8；Package：PG-TO247-4；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.22973 Mbytes 页数：14 Pages

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丝印：60R044RF；Package：TO-247；600V 0.044Ω N-channel MOSFET

 Description MMQ60R044RF is power MOSFET using Magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It has low gate charge and ultra-fast body diode, so turn off action is improved. MMQ60R044RF provides excellent performances, such as efficien

文件：696.29 Kbytes 页数：10 Pages

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丝印：60R040F7；Package：PG-TO263-3；600V CoolMOS짧 CFD7 Power Transistor

文件：1.27961 Mbytes 页数：14 Pages

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丝印：60R045F7；Package：PG-HDSOP-10；600V CoolMOS??CFD7 Power Transistor

文件：1.07515 Mbytes 页数：14 Pages

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丝印：60R010S7；Package：PG-HDSOP-22；600V CoolMOS짧 SJ S7 Power Device

文件：1.19369 Mbytes 页数：14 Pages

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