Radial Leaded PTC

文件：152.05 Kbytes 页数：2 Pages

LITTELFUSE

力特

丝印：60R；Package：5-PinSOT23；1MHz, 80關A, RRIO, Op Amps

文件：944.57 Kbytes 页数：17 Pages

3PEAK

思瑞浦

600VCoolMOSªCM8PowerTransistor

Features •Suitableforhardandsoftswitchingtopologiesthankstoan  outstandingcommutationruggedness •Significantreductionofswitchingandconductionlosses •BestinclassRDS(on)perpackageproductsenabledbyultralowRDS(on)*A Benefits •Easeofuseandfastdesign-inthroughlowringingtendencyandusage  acrossP

文件：1.2297 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

文件：1.19982 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：536.93 Kbytes 页数：17 Pages

INFINEON

英飞凌

600V CoolMOS짧 CFD7 Power Transistor

Features •Ultra-fastbodydiode •Lowgatecharge •Best-in-classreverserecoverycharge(Qrr) •ImprovedMOSFETreversediodedv/dtanddiF/dtruggedness •LowestFOMRDS(on)*QgandRDS(on)*Eoss •Best-in-classRDS(on)inSMDandTHDpackages

文件：1.39023 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOS C6 Power Transistor

Description CoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devi

文件：1.22055 Mbytes 页数：19 Pages

INFINEON

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：498.44 Kbytes 页数：16 Pages

INFINEON

英飞凌

600V CoolGaN™ enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：498.44 Kbytes 页数：16 Pages

INFINEON

英飞凌

600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：500.23 Kbytes 页数：17 Pages

INFINEON

英飞凌