600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：536.93 Kbytes 页数：17 Pages

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英飞凌

丝印：60R070D1；Package：PG-DSO-20-87；600V CoolGaN??enhancement-mode Power Transistor

Features  Enhancement mode transistor – Normally OFF switch  Ultra fast switching  No reverse-recovery charge  Capable of reverse conduction  Low gate charge, low output charge  Superior commutation ruggedness  Qualified for industrial applications according to JEDEC Standards (JESD

文件：536.93 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60R070D1；Package：PG-LSON-8-1；600V CoolGaN??enhancement-mode Power Transistor

文件：513.26 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60R070D1；Package：PG-DSO-20-85；600V CoolGaN??enhancement-mode Power Transistor

文件：532.74 Kbytes 页数：17 Pages

Infineon

英飞凌

丝印：60R070D1；Package：PG-HSOF-8-3；600V CoolGaN??enhancement-mode Power Transistor

文件：548.38 Kbytes 页数：17 Pages

Infineon

英飞凌