丝印：60R024F7；Package：PG-TO247-3；600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：974.05 Kbytes 页数：14 Pages

Infineon

英飞凌

600V CoolMOS ™ CFD7 超结 MOSFET，采用 TO-247 封装，集成快速体二极管，是谐振高功率拓扑的完美选择

• Ultra-fast body diode\n• Best-in-class reverse recovery charge (Qrr)\n• Improved reverse diode dv/dt and dif/dt ruggedness\n• Lowest FOM RDS(on)x Qgand Eoss\n• Best-in-class RDS(on)/package combinations\n\n优势:\n• Best-in-class hard commutation ruggedness\n• Highest reliability for resonant topolog;

Infineon

英飞凌

600V CoolMOSª CFD7 Power Transistor

Features • Ultra-fast body diode • Low gate charge • Best-in-class reverse recovery charge (Qrr) • Improved MOSFET reverse diode dv/dt and diF/dt ruggedness • Lowest FOM RDS(on)*Qg and RDS(on)*Eoss • Best-in-class RDS(on) in SMD and THD packages Benefits • Excellent hard commutation rugg

文件：974.05 Kbytes 页数：14 Pages

Infineon

英飞凌

MOSFET HIGH POWER_NEW

Infineon

英飞凌