IPW60R024CFD7XKSA1中文资料英飞凌数据手册PDF规格书

特性 Features

• Ultra-fast body diode

• Low gate charge

• Best-in-class reverse recovery charge (Qrr)

• Improved MOSFET reverse diode dv/dt and diF/dt ruggedness

• Lowest FOM RDS(on)*Qg and RDS(on)*Eoss

• Best-in-class RDS(on) in SMD and THD packages

Benefits

• Excellent hard commutation ruggedness

• Highest reliability for resonant topologies

• Highest efficiency with outstanding ease-of-use / performance tradeoff

• Enabling increased power density solutions

Potential applications

Suiteable for Soft Switching topologies

Optimized for phase-shift full-bridge (ZVS), LLC Applications – Server,

Telecom, EV Charging

Product validation

Fully qualified according to JEDEC for Industrial Applications