丝印：60R022S7；Package：PG-HSOF-8；600V CoolMOS짧 SJ S7 Power Device

MOSFET 600V CoolMOS™ SJS7 Power Device IPT60R022S7 enables the best price performance for low frequency switching applications. CoolMOS™ S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS™ S7 is optimized for “static switching” and high

文件：1.10033 Mbytes 页数：14 Pages

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英飞凌

英飞凌性价比最高的 600V CoolMOS ™ S7 超结 MOSFET，适用于 TO-Leadless (TOLL) 封装的低频开关应用

英飞凌的 600V CoolMOS ™ S7 超结 MOSFET（IPT60R022S7）采用 TO-Leadless（无铅）封装，具有优化的设计，可降低传导损耗。600V CoolMOS ™ SJ MOSFET 实现了更高的能源效率并降低了物料成本。IPT60R022S7 为低频开关应用（如有源桥式整流、逆变级、浪涌继电器、PLC、高压直流线路、功率固态继电器 (SSR) 和固态断路器 (SSCB)）实现了最佳的 RDS(on)  x 价格。 • TOLL 中最佳的 R DS(on)\n• 提高了热阻\n• 提高了开关性能\n• TOLL 封装符合 MSL1 标准;

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英飞凌

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.03865 Mbytes 页数：14 Pages

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英飞凌

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA

文件：1.46122 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • TO220 package with total Pb-free die attach

文件：1.6379 Mbytes 页数：14 Pages

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英飞凌