丝印：60R022S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.03865 Mbytes 页数：14 Pages

INFINEON

英飞凌

低 RDS(on) 600V SJ MOSFET，采用高效的顶部冷却 QDPAK，非常适合低频开关应用和固态解决方案

\n优势:\n• Minimizes conduction losses\n• Increases energy efficiency\n• More compact and easier designs\n• Eliminates or reduces heat sinks in solid-state design\n• Lower TCO cost or BOM cost;

Infineon

英飞凌

丝印：60A022S7；Package：PG-HDSOP-22；600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA

文件：1.46122 Mbytes 页数：14 Pages

INFINEON

英飞凌

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：HIGH POWER_NEW PG-HDSOP-22

INFINEON

英飞凌