丝印：60R022S7；Package：PG-TO220-3；600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • TO220 package with total Pb-free die attach

文件：1.6379 Mbytes 页数：14 Pages

INFINEON

英飞凌

英飞凌性价比最高的超结 MOSFET，适用于 TO-220 封装的低频开关应用

• Best-in-class RDS(on) in TO-220\n• Optimized for conduction performance\n• Improved thermal resistance\n• High pulse current capability\n\n优势:\n• Minimize conduction losses\n• Increase energy efficiency\n• More compact and easier designs\n• Eliminate or reduce heat sink in solid state design\n• Lo;

Infineon

英飞凌

600V CoolMOS짧 SJ S7 Power Device

MOSFET 600V CoolMOS™ SJS7 Power Device IPT60R022S7 enables the best price performance for low frequency switching applications. CoolMOS™ S7 boasts the lowest Rdson values for a HV SJ MOSFET, with distinctive increase of energy efficiency. CoolMOS™ S7 is optimized for “static switching” and high

文件：1.10033 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª SJ S7 Power Device

Features • CoolMOS™ S7 technology enables 22mW RDS(on) in the smallest footprint • Optimized price performance in low frequency switching applications • High pulse current capability • Kelvin Source pin improves switching performance at high current • QDPAK (PG-HDSOP-22-1) offers top side coo

文件：1.03865 Mbytes 页数：14 Pages

INFINEON

英飞凌

600V CoolMOSª SJ S7A Power Device

Features • Optimized for low switching frequency in high-end applications (circuit breakers and diode paralleling/replacement in bridge rectifiers). • S7A technology enables best in class RDS(on) in smallest footprint. • Kelvin Source pin improves switching performance at high current. • QDPA

文件：1.46122 Mbytes 页数：14 Pages

INFINEON

英飞凌