IPDQ60R015CFD7中文资料英飞凌数据手册PDF规格书

特性 Features

• Ultra-fast body diode

• Low gate charge

• Best-in-class reverse recovery charge (Qrr)

• Improved MOSFET reverse diode dv/dt and diF/dt ruggedness

• Lowest FOM RDS(on)*Qg and RDS(on)*Eoss

• Best-in-class RDS(on) in SMD and THD packages

Benefits

• Excellent hard commutation ruggedness

• Highest reliability for resonant topologies

• Highest efficiency with outstanding ease-of-use / performance tradeoff

• Enabling increased power density solutions