丝印：60R037C8；Package：PG-HDSOP-10；MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.22 Mbytes 页数：14 Pages

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IPDD60R037CM8 - 600 V CoolMOS ™ 8 功率晶体管

600 V CoolMOS ™ 8 SJ MOSFET 系列是 600 V CoolMOS ™ 7 MOSFET 系列（包括 P7、S7、CFD7、C7 (G7) 和 PFD7）的后续产品。它的栅极电荷 (Qg) 比 CFD7 降低了 20%，关断损耗 (Eoss) 比 CFD7 进一步降低了 12%，反向恢复电荷 (Qrr) 与 CFD7 相比降低了 3%，并且具有市场上最低的反向恢复时间 (trr)。 • 一流的 RDS(on)*A\n • 大幅减少损失\n • 出色的换向坚固性\n • 集成快速体二极管\n • .XT 互连\n • ESD 保护\n • 顶部冷却 D-DPAK 封装;

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英飞凌

MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.21092 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.16695 Mbytes 页数：14 Pages

Infineon

英飞凌

MOSFET 600V CoolMOSª CM8 Power Transistor

Features • Suitable for hard and soft switching topologies thanks to an outstanding commutation ruggedness • Significant reduction of switching and conduction losses • Best in class RDS(on) per package products enabled by ultra low RDS(on)*A Benefits • Ease of use and fast design-in throug

文件：1.38326 Mbytes 页数：14 Pages

Infineon

英飞凌