丝印：J200；Package：SC-65；P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：181.4 Kbytes 页数：3 Pages

TOSHIBA

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丝印：J200；Package：SC-65；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：297.65 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-10A@ TC=25℃ · Drain Source Voltage -VDSS= -180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：313.92 Kbytes 页数：2 Pages

ISC

无锡固电

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：297.65 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

文件：269.13 Kbytes 页数：5 Pages

TOSHIBA

东芝

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

文件：182.18 Kbytes 页数：3 Pages

TOSHIBA

东芝

High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

文件：269.13 Kbytes 页数：5 Pages

TOSHIBA

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ202 is a P-channel vertical type MOS FET which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VTR cameras and hea

文件：505.66 Kbytes 页数：7 Pages

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