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2SJ200

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ200

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ200

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ200-Y

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ201

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ201

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ201

High-Power Amplifier Application

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ201-Y

High-Power Amplifier Application

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

2SJ202

P-CHANNEL MOS FET FOR SWITCHING

The2SJ202isanP-chnnalverticaltypeMOSFETwhichcanbedrivenby2.5Vpowersupply. Features ●DirectlydrivenbyICshavinga3Vpowersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebias

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ202

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ202isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding VTRcamerasandhea

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ203

MOS Fied Effect Transistor

■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ203

MOS FIELD EFFECT TRANSISTOR

Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentthankstohightinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresisor.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ203

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING The2SJ203isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. The2SJ203isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliances includingVCR,camerasandheadphonestereoswhi

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ203-3

P-Channel MOSFET

■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON)

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ203-T1B-A

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ203-T2B-A

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

2SJ204

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNELMOSFETFORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICshavinga5Vpowersource. AstheMOSFEThaslowon-stateresistanceandexcellentswitchingcharacteristics,itissuitablefordrivingactuators

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ204

MOS Fied Effect Transistor

Features ●DirectlydrivenbyIcshavinga5Vpowersupply. ●Haslowon-stateresistance RDS(on)=13ΩMAX.@VGS=-4.0V,ID=-10mA RDS(on)=8ΩMAX.@VGS=-10V,ID=-10mA

KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD

科信电子广东科信实业有限公司

2SJ204

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga Vpowersource. The2SJ204haslowon-stateresistanceandexcellentswitching characteristics,itissuitablefordrivingactuatorss

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

2SJ205

P-CHANNEL MOS FET FOR SWITCHING

Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor. ●Haslowon-stateresistance RDS(on)=5ΩMAX.@VGS=-2.5V,ID=-10mA RDS(

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

详细参数

  • 型号:

    2SJ20

  • 制造商:

    TOSHIBA

  • 制造商全称:

    Toshiba Semiconductor

  • 功能描述:

    High Power Amplifier Application

供应商型号品牌批号封装库存备注价格
TOSHIBA
23+
TO-3P
9526
询价
HITACHI
08PB
60000
询价
TOSHIBA
15+
TO-247
11560
全新原装,现货库存,长期供应
询价
FSC
23+
TO3
9280
价格优势、原装现货、客户至上。欢迎广大客户来电查询
询价
TOSHIBA
2339+
TO-220(NIS)
8858
公司原厂原装现货假一罚十!特价出售!强势库存!
询价
TOS
1746+
TO3P
8862
深圳公司现货!特价支持工厂客户!提供样品!
询价
TOSHIBA
2020+
TO-3PL
16800
绝对原装进口现货,假一赔十,价格优势!?
询价
TOSHIBA
2021+
TO-220(NIS)
6540
原装现货/欢迎来电咨询
询价
TOSHIBA/东芝
TO-3P
265209
假一罚十原包原标签常备现货!
询价
TOSHIBA/东芝
23+
TO-3P(N)
10000
公司只做原装正品
询价
更多2SJ20供应商 更新时间2024-6-15 15:54:00