2SJ200

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ200

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ200

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SJ200-Y

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ201

P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

2SJ201

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SJ201

High-Power Amplifier Application

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

2SJ201-Y

High-Power Amplifier Application

High-PowerAmplifierApplication Highbreakdownvoltage:VDSS=−200V Highforwardtransferadmittance:|Yfs|=5.0S(typ.) Complementaryto2SK1530

2SJ202

P-CHANNEL MOS FET FOR SWITCHING

The2SJ202isanP-chnnalverticaltypeMOSFETwhichcanbedrivenby2.5Vpowersupply. Features ●DirectlydrivenbyICshavinga3Vpowersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebias

2SJ202

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING DESCRIPTION The2SJ202isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. AstheMOSFETisdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliancesincluding VTRcamerasandhea

2SJ203

MOS Fied Effect Transistor

■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON)

2SJ203

MOS FIELD EFFECT TRANSISTOR

Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentthankstohightinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresisor.

2SJ203

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING The2SJ203isaP-channelverticaltypeMOSFETwhichcanbe drivenby2.5Vpowersupply. The2SJ203isdrivenbylowvoltageanddoesnotrequire considerationofdrivingcurrent,itissuitableforappliances includingVCR,camerasandheadphonestereoswhi

2SJ203-3

P-Channel MOSFET

■Features ●VDS(V)=-16V ●ID=-200mA ●RDS(ON)

2SJ203-T1B-A

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC

2SJ203-T2B-A

P-Channel 60 V (D-S) MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •TrenchFET®PowerMOSFET •High-SideSwitching •LowOn-Resistance:3 •LowThreshold:-2V(typ.) •FastSwtichingSpeed:20ns(typ.) •LowInputCapacitance:20pF(typ.) •ComplianttoRoHSDirective2002/95/EC

2SJ204

P-CHANNEL MOS FET FOR SWITCHING

P-CHANNELMOSFETFORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitchingdevicewhichcanbedrivendirectlybytheoutputofICshavinga5Vpowersource. AstheMOSFEThaslowon-stateresistanceandexcellentswitchingcharacteristics,itissuitablefordrivingactuators

2SJ204

MOS Fied Effect Transistor

Features ●DirectlydrivenbyIcshavinga5Vpowersupply. ●Haslowon-stateresistance RDS(on)=13ΩMAX.@VGS=-4.0V,ID=-10mA RDS(on)=8ΩMAX.@VGS=-10V,ID=-10mA

2SJ204

MOS FIELD EFFECT TRANSISTOR

P-CHANNELMOSFET FORSWITCHING The2SJ204,P-channelverticaltypeMOSFET,isaswitching devicewhichcanbedrivendirectlybytheoutputofICshavinga Vpowersource. The2SJ204haslowon-stateresistanceandexcellentswitching characteristics,itissuitablefordrivingactuatorss

2SJ205

P-CHANNEL MOS FET FOR SWITCHING

Features ●DirectlydrivenbyICshavinga3Vpoersupply. ●Notnecessarytoconsiderdrivingcurrentbecauseofitshighinputimpedance. ●Possibletoreducethenumberofpartsbyomittingthebiasresistor. ●Haslowon-stateresistance RDS(on)=5ΩMAX.@VGS=-2.5V,ID=-10mA RDS(