丝印：H18；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ211, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ211 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

文件：470.67 Kbytes 页数：7 Pages

RENESAS

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MOS Fied Effect Transistor

■ Features ● VDS (V) =-100V ● ID =-0.2 A ● RDS(ON)

文件：42.53 Kbytes 页数：1 Pages

KEXIN

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P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

文件：486.68 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FET FOR SWITCHING

文件：394.26 Kbytes 页数：6 Pages

NEC

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Power MOSFETs-Power MOSFETs for Automotive

Renesas

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P-Channel MOSFET

■ Features ● VDS (V) =-100V ● ID =-0.2 A ● RDS(ON)

文件：1.26042 Mbytes 页数：3 Pages

KEXIN

科信电子

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

文件：487.76 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

文件：1.25199 Mbytes 页数：3 Pages

KEXIN

科信电子

P-channel MOS FET

NEC

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