High-Power Amplifier Application

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

文件：269.13 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)

High-Power Amplifier Application High breakdown voltage : VDSS= −200 V High forward transfer admittance : |Yfs| = 5.0 S (typ.) Complementary to 2SK1530

文件：182.18 Kbytes 页数：3 Pages

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High-Power Amplifier Application

文件：275.09 Kbytes 页数：5 Pages

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