2SJ246S技术资料参数供应代理日立Hitachi-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ246S	文件：39.29 Kbytes Page：7 Pages	SILICON P-CHANNEL MOS FET Features • Low on–resistance • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter Application High speed power switching 文件：39.29 Kbytes 页数：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ246S	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas
2SJ246	文件：39.29 Kbytes Page：7 Pages	SILICON P-CHANNEL MOS FET Features • Low on–resistance • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter Application High speed power switching 文件：39.29 Kbytes 页数：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ246L	文件：39.29 Kbytes Page：7 Pages	SILICON P-CHANNEL MOS FET Features • Low on–resistance • High speed switching • Low drive current • 4V gate drive device can be driven from 5V source. • Suitable for Switching regulator, DC – DC converter Application High speed power switching 文件：39.29 Kbytes 页数：7 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi

更多2SJ246S供应商更新时间2025-10-11 17:00:00