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零件编号	下载订购	功能描述/丝印	制造商上传企业	LOGO
2SJ217	文件：49.22 Kbytes Page：9 Pages	Silicon P-Channel MOS FET Application Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ217	文件：82.51 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS
2SJ217	文件：336.21 Kbytes Page：2 Pages	P-Channel Power MOSFET DESCRIPTION ·DrainCurrent–ID=-45A@TC=25℃ ·DrainSourceVoltage- :VDSS=-60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=42mΩ(Max) ·Highspeedswitching APPLICATIONS ·Highspeedpowerswitching	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
2SJ217-E	文件：82.51 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description Highspeedpowerswitching Features •Lowon-resistance •Highspeedswitching •Lowdrivecurrent •4Vgatedrivedevice Canbedrivenfrom5Vsource •Suitableformotordrive,DC-DCconverter,powerswitchandsolenoiddrive	RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司	RENESAS

更多2SJ217供应商更新时间2025-5-24 10:02:00