Silicon P-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：49.22 Kbytes 页数：9 Pages

HITACHIHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.51 Kbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel Power MOSFET

DESCRIPTION ·Drain Current –ID= -45A@ TC=25℃ ·Drain Source Voltage- : VDSS= -60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 42mΩ(Max) ·High speed switching APPLICATIONS ·High speed power switching

文件：336.21 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P-Channel MOS FET

Application\nHigh speed power switching\n •  Low on-resistance\n•  Low drive current\n•  Suitable for motor drive, DC-DC converter, power switch and solenoid drive;

HITACHI

日立

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.51 Kbytes 页数：7 Pages

RENESAS

瑞萨