Silicon P-Channel MOS FET

Features ● Low on-resistance ● High speed switching ● 4 V gate drive device - Can be driven from 5 V source ● Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

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HitachiHitachi Semiconductor

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Silicon P-Channel MOS FET

● Low on-resistance\n● High speed switching\n● 4 V gate drive device\n   - Can be driven from 5 V source\n● Suitable for motor drive, DC-DC converter, power switch and solenoid driveApplication\n  High speed power switching;

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SOT324

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