Silicon P-Channel MOS FET

Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：48.48 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：81.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

High Speed Switching

文件：64.89 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P-Channel MOS FET

HITACHI

日立

Transistors>Switching/MOSFETs

Renesas

瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：81.55 Kbytes 页数：7 Pages

RENESAS

瑞萨