2SJ221-E资料datasheet下载贸易商瑞萨-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ221-E	文件：81.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：81.55 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ221	文件：48.48 Kbytes Page：8 Pages	Silicon P-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：48.48 Kbytes 页数：8 Pages	HITACHIHitachi Semiconductor 日立日立公司	HITACHI
2SJ221	文件：81.55 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：81.55 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ221	文件：64.89 Kbytes Page：2 Pages	High Speed Switching 文件：64.89 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多2SJ221-E供应商更新时间2026-4-21 10:20:00