2SJ247数据表ic资料库存现货瑞萨RENESAS-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ247	文件：47.46 Kbytes Page：8 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching 文件：47.46 Kbytes 页数：8 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ247	文件：81.56 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter 文件：81.56 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ247	文件：300 bytes Page：1 Pages	Power MOSFETs	Renesas 瑞萨	Renesas
2SJ247-E	文件：81.56 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter 文件：81.56 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ247_15	文件：101.03 Kbytes Page：9 Pages	Silicon P Channel MOS FET 文件：101.03 Kbytes 页数：9 Pages	RENESAS 瑞萨	RENESAS

更多2SJ247供应商更新时间2025-12-2 16:01:00