Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -20A@ TC=25℃ · Drain Source Voltage -VDSS= -100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.16Ω(Max)@VGS= -10V APPLICATIONS · High Speed Power Switching

文件：296.33 Kbytes 页数：2 Pages

ISC

无锡固电

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive

文件：82.29 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching

文件：34.22 Kbytes 页数：6 Pages

HITACHIHitachi Semiconductor

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