2SJ222-E技术资料参数原装现货瑞萨RENESAS-114ic电子网

首页 >2SJ222-E>规格书列表

型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ222-E	文件：82.29 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：82.29 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ222	文件：82.29 Kbytes Page：7 Pages	Silicon P Channel MOS FET Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device -Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive 文件：82.29 Kbytes 页数：7 Pages	RENESAS 瑞萨	RENESAS
2SJ222	文件：34.22 Kbytes Page：6 Pages	Silicon P-Channel MOS FET Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device - Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power switch and solenoid drive Application High speed power switching 文件：34.22 Kbytes 页数：6 Pages	HitachiHitachi Semiconductor 日立日立公司	Hitachi
2SJ243-T1-A	文件：0 bytes Page：0 Pages	SOT324	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SJ3098-024111F	文件：0 bytes Page：0 Pages	NA	信音上传：深圳权泰科技有限公司	信音

更多2SJ222-E供应商更新时间2025-12-1 13:31:00