P-CHANNEL MOS FET FOR SWITCHING

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor. ● Has low on-state resistance RDS(on)=5Ω MAX.@VGS=-2.5V,ID=-10mA RDS(

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NEC

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MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VC

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RENESAS

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MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-0.5 A (VGS =-10V) ● RDS(ON)

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KEXIN

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P-CHANNEL MOS FET FOR SWITCHING

Renesas

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P-Channel MOSFET

文件：1.0255 Mbytes 页数：4 Pages

KEXIN

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