2SJ324

MOS Field Effect Power Transistors

Features ●Lowon-stateresistance RDS(on)=0.18Ω(VGS=-10V,ID=-1A) RDS(on)=0.36Ω(VGS=-4V,ID=-0.8A) ●Built-inG-SGateProtectionDiode

2SJ324

MOS FIELD EFFECT TRANSISTOR

SWITCHING P-CHANNELPOWERMOSFET DESCRIPTION The2SJ324isP-channelMOSFieldEffectTransistordesignedfor solenoid,motorandlampdriver. FEATURES •LowOn-stateResistance RDS(on)=0.18ΩTYP.(VGS=−10V,ID=−1.0A) RDS(on)=0.36ΩTYP.(VGS=−4V,ID=−0.8A) •LowCis

2SJ324

SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE