P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source. The MOS FET has excellent switching characteristic and is suitable for use as a high-speed switching device in digital circuits. FEATURES • Can be driven by a 2.5 V power source • Not necessary

文件：278.2 Kbytes 页数：6 Pages

NEC

瑞萨

丝印：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

DESCRIPTION The 2SJ461 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461 has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can be driven by a 2.5 V power source • Not necess

文件：1.07734 Mbytes 页数：7 Pages

RENESAS

瑞萨

MOS Field Effect Transistor

Features ● Can be driven by a 2.5V power source. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor.

文件：44.03 Kbytes 页数：1 Pages

KEXIN

科信电子

Power MOSFETs-Power MOSFETs for Automotive

Renesas

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can b

文件：1.0003 Mbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：980.24 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

丝印：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can b

文件：1.0003 Mbytes 页数：7 Pages

RENESAS

瑞萨

丝印：H19；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ461A is a switching device which can be driven directly by a 2.5 V power source. The 2SJ461A has excellent switching characteristics and is suitable for use as a high-speed switching device in digital circuit. FEATURES • Can b

文件：1.0003 Mbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：980.21 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 Ω • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：980.21 Kbytes 页数：7 Pages

VBSEMI

微碧半导体