Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

文件：78.73 Kbytes 页数：7 Pages

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瑞萨

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

文件：78.73 Kbytes 页数：7 Pages

RENESAS

瑞萨

P-Channel Enhancement MOSFET

Application « PWM applications » Load switch « Power management

文件：3.09018 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

Silicon P Channel MOS FET

Description High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter

文件：78.73 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P-Channel MOS FET

Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for switching regulator, DC-DC converter Application High speed power switching

文件：42.2 Kbytes 页数：8 Pages

HitachiHitachi Semiconductor

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