MOS FIELD EFFECT TRANSISTOR

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current thanks to hight input impedance. ● Possible to reduce the number of parts by omitting the bias resisor.

文件：241.97 Kbytes 页数：8 Pages

NEC

瑞萨

丝印：H14；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ203 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR, cameras and headphone stereos whi

文件：405.5 Kbytes 页数：7 Pages

RENESAS

瑞萨

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

文件：42.69 Kbytes 页数：1 Pages

KEXIN

科信电子

Power MOSFETs-Power MOSFETs for Automotive

Renesas

瑞萨

P-Channel MOSFET

■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON)

文件：1.34113 Mbytes 页数：3 Pages

KEXIN

科信电子

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：980.36 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel 60 V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3  • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC

文件：981.3 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

文件：1.33322 Mbytes 页数：3 Pages

KEXIN

科信电子