P-CHANNEL MOS FET FOR SWITCHING

Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias resistor. ● Has low on-state resistance RDS(on)=5Ω MAX.@VGS=-2.5V,ID=-10mA RDS(

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NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ205, P-channel vertical type MOS FET, is a switching device which can be driven by 3 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VC

文件：565.44 Kbytes 页数：7 Pages

RENESAS

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MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-0.5 A (VGS =-10V) ● RDS(ON)

文件：43.93 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING

文件：519.72 Kbytes 页数：8 Pages

RENESAS

瑞萨

MOS Fied Effect Transistor

■ Features ● VDS (V) =-16V ● ID =-1 A (VGS =-10V) ● RDS(ON)

文件：43.32 Kbytes 页数：1 Pages

KEXIN

科信电子

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ207, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including

文件：568.56 Kbytes 页数：7 Pages

RENESAS

瑞萨

MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOS FET FOR SWITCHING DESCRIPTION The 2SJ208, P-channel vertical type MOS FET, is a switching device which can be driven by 2.5 V power supply. As the MOS FET is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including

文件：483.92 Kbytes 页数：6 Pages

RENESAS

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丝印：H17；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ209, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ209 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

文件：343.57 Kbytes 页数：7 Pages

RENESAS

瑞萨

MOS Fied Effect Transistor

Features Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor.

文件：42.98 Kbytes 页数：1 Pages

KEXIN

科信电子

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

文件：249.86 Kbytes 页数：8 Pages

VBSEMI

微碧半导体