丝印：H17；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ209, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. The 2SJ209 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators

文件：343.57 Kbytes 页数：7 Pages

RENESAS

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MOS Fied Effect Transistor

Features Directly driven by Ics having a 5V poer supply. Not necessary to consider driving current because of its high input impedance. Possible to reduce the number of parts by omitting the biasresistor.

文件：42.98 Kbytes 页数：1 Pages

KEXIN

科信电子

P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

文件：249.86 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-CHANNEL MOS FET FOR SWITCHING

文件：422.75 Kbytes 页数：6 Pages

NEC

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P-Channel MOSFET

文件：1.26402 Mbytes 页数：3 Pages

KEXIN

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Power MOSFETs-Power MOSFETs for Automotive

Renesas

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P-Channel 100-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET • Ultra Low On-Resistance • Small Size APPLICATIONS • Active Clamp Circuits in DC/DC Power Supplies

文件：339.69 Kbytes 页数：8 Pages

VBSEMI

微碧半导体

P-Channel MOSFET

文件：1.27599 Mbytes 页数：3 Pages

KEXIN

科信电子

P-channel MOS FET

NEC

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