Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

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Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET

Description Low frequency power switching Features • Low on-resistance RDS (on) = 0.5 Ω typ. (at VGS = –4 V, ID = –100 mA) • 2.5 V gate drive devices. • Small package (MPAK).

文件：79.55 Kbytes 页数：7 Pages

RENESAS

瑞萨

Silicon P Channel MOS FET Low FrequencyPower Switching

Features • Low on-resistance RDS(on) = 0.5 Ω typ. (at VGS = –4V, ID = –100 mA) • 2.5V gate drive devices. • Small package (MPAK).

文件：41.31 Kbytes 页数：8 Pages

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