| 型号 | 下载 订购 | 功能描述 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
P-CHANNEL MOS FET FOR SWITCHING The 2SJ202 is an P-chnnal vertical type MOS FET which can be driven by 2.5 V power supply. Features ● Directly driven by ICs having a 3V power supply. ● Not necessary to consider driving current because of its high input impedance. ● Possible to reduce the number of parts by omitting the bias 文件:406.88 Kbytes 页数:6 Pages | NEC 瑞萨 | NEC | ||
MOS FIELD EFFECT TRANSISTOR Features ● Directly driven by ICs having a 3V poer supply. ● Not necessary to consider driving current thanks to hight input impedance. ● Possible to reduce the number of parts by omitting the bias resisor. 文件:241.97 Kbytes 页数:8 Pages | NEC 瑞萨 | NEC | ||
丝印:H14;Package:SC-59;MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOSFET FOR SWITCHING The 2SJ203 is a P-channel vertical type MOSFET which can be driven by 2.5 V power supply. The 2SJ203 is driven by low voltage and does not require consideration of driving current, it is suitable for appliances including VCR, cameras and headphone stereos whi 文件:405.5 Kbytes 页数:7 Pages | RENESAS 瑞萨 | RENESAS | ||
MOS Fied Effect Transistor ■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON) 文件:42.69 Kbytes 页数:1 Pages | KEXIN 科信电子 | KEXIN | ||
P-Channel MOSFET ■ Features ● VDS (V) =-16V ● ID =-200m A ● RDS(ON) 文件:1.34113 Mbytes 页数:3 Pages | KEXIN 科信电子 | KEXIN | ||
P-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC 文件:980.36 Kbytes 页数:7 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
P-Channel 60 V (D-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • High-Side Switching • Low On-Resistance: 3 • Low Threshold: - 2 V (typ.) • Fast Swtiching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Compliant to RoHS Directive 2002/95/EC 文件:981.3 Kbytes 页数:7 Pages | VBSEMI 微碧半导体 | VBSEMI | ||
MOS Fied Effect Transistor Features ● Directly driven by Ics having a 5V power supply. ● Has low on-state resistance RDS(on)=13 Ω MAX.@VGS=-4.0V,ID=-10mA RDS(on)=8 Ω MAX.@VGS=-10V,ID=-10mA 文件:43.95 Kbytes 页数:1 Pages | KEXIN 科信电子 | KEXIN | ||
丝印:H15;Package:SC-59;MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators s 文件:347.67 Kbytes 页数:7 Pages | RENESAS 瑞萨 | RENESAS | ||
P-CHANNEL MOS FET FOR SWITCHING P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOS FET, is a switching device which can be driven directly by the output of ICs having a 5 V power source. As the MOS FET has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators 文件:323.71 Kbytes 页数:6 Pages | NEC 瑞萨 | NEC |
详细参数
- 型号:
2SJ20
- 制造商:
Renesas Electronics
- 功能描述:
Trans MOSFET P-CH 16V 0.1A 3-Pin SC-70 T/R Cut Tape
- 制造商:
Renesas
- 功能描述:
Trans MOSFET P-CH 16V 0.1A 3-Pin SC-70 T/R
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
2019+PB |
SSPSC-70 |
85000 |
原装正品 可含税交易 |
询价 | ||
RENESAS/瑞萨 |
2025+ |
SOT-23 |
5000 |
原装进口价格优 请找坤融电子! |
询价 | ||
NEC |
24+ |
SOT-323 |
54800 |
新进库存/原装 |
询价 | ||
VISHAY |
13+ |
TO-92 |
3258 |
原装分销 |
询价 | ||
NEC |
24+ |
原厂封装 |
2835 |
原装现货假一罚十 |
询价 | ||
NEC |
24+ |
8858 |
公司原厂原装现货假一罚十!特价出售!强势库存! |
询价 | |||
SOT-323 |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
Renesas |
19+ |
SSPSC-70 |
200000 |
询价 | |||
NEC |
20+ |
SOT323 |
32970 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
NEC |
24+ |
6540 |
原装现货/欢迎来电咨询 |
询价 |
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