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型号	下载订购	功能描述	制造商上传企业	LOGO
2SJ462	文件：63.14 Kbytes Page：6 Pages	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applications such as power management. FEATURES • Can be driven by a 2.5 V p 文件：63.14 Kbytes 页数：6 Pages	NEC 瑞萨	NEC
2SJ462	文件：266.08 Kbytes Page：8 Pages	MOS FIELD EFFECT TRANSISTOR P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION The 2SJ462 is a switching device which can be driven directly by an IC operating at 3 V. The 2SJ462 features a low on-state resistance and can be driven by a low voltage power source, so it is suitable for applicati 文件：266.08 Kbytes 页数：8 Pages	RENESAS 瑞萨	RENESAS
2SJ462	文件：300 bytes Page：1 Pages	Power MOSFETs-Power MOSFETs for Automotive	Renesas 瑞萨	Renesas
2SJ605-Z-E1	文件：0 bytes Page：0 Pages	RENESAS TO263	RENESAS 瑞萨上传：深圳市正纳电子有限公司	RENESAS
2SJ652-1E	文件：0 bytes Page：0 Pages	ON TO-220-3	ON 上传：深圳市芯峰微电子科技有限公司	ON

更多2SJ462供应商更新时间2025-10-12 17:06:00