丝印：H15；Package：SC-59；MOS FIELD EFFECT TRANSISTOR

P-CHANNEL MOSFET FOR SWITCHING The 2SJ204, P-channel vertical type MOSFET, is a switching device which can be driven directly by the output of ICs having a V power source. The 2SJ204 has low on-state resistance and excellent switching characteristics, it is suitable for driving actuators s

文件：347.67 Kbytes 页数：7 Pages

RENESAS

瑞萨

丝印：H15；Package：LFCSP；Ultralow Distortion, Low Power, Low Noise, High Speed Op Amp

FEATURES High speed 850 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, LFCSP) 750 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, SOIC) 2800 V/μs slew rate Low distortion: −88 dBc at 10 MHz (G = +1, RL = 1 kΩ) Low power: 5 mA/amplifier at 10 V Low noise: 4.4 nV/√Hz Wide supply voltage range: 5 V to 10 V Powe

文件：553.99 Kbytes 页数：21 Pages

AD

亚德诺

丝印：H15；Package：LFCSP；Ultralow Distortion, Low Power, Low Noise, High Speed Op Amp

FEATURES High speed 850 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, LFCSP) 750 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, SOIC) 2800 V/μs slew rate Low distortion: −88 dBc at 10 MHz (G = +1, RL = 1 kΩ) Low power: 5 mA/amplifier at 10 V Low noise: 4.4 nV/√Hz Wide supply voltage range: 5 V to 10 V Powe

文件：553.99 Kbytes 页数：21 Pages

AD

亚德诺

丝印：H15；Package：LFCSP；Ultralow Distortion, Low Power, Low Noise, High Speed Op Amp

FEATURES High speed 850 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, LFCSP) 750 MHz, −3 dB bandwidth (G = +1, RL = 1 kΩ, SOIC) 2800 V/μs slew rate Low distortion: −88 dBc at 10 MHz (G = +1, RL = 1 kΩ) Low power: 5 mA/amplifier at 10 V Low noise: 4.4 nV/√Hz Wide supply voltage range: 5 V to 10 V Powe

文件：553.99 Kbytes 页数：21 Pages

AD

亚德诺

丝印：H15；Package：SOT-26；General purpose (dual digital transistors)

Features 1) Two DTC114T chips in a EMT or UMT or SMT package.

文件：72.01 Kbytes 页数：2 Pages

ROHM

罗姆

丝印：H15；Package：EMT6；General purpose (dual digital transistors)

文件：62.82 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H15；Package：EMT6；General purpose (dual digital transistors)

文件：95.4 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H15；Package：SOT-26；General purpose (dual digital transistors)

文件：62.82 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H15；Package：SOT-26；General purpose (dual digital transistors)

文件：95.4 Kbytes 页数：3 Pages

ROHM

罗姆

丝印：H15N70AF；Package：TO-220F；700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

文件：2.35836 Mbytes 页数：9 Pages

SY

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