丝印：H15N70AF；Package：TO-220F；700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

文件：2.35836 Mbytes 页数：9 Pages

SY

顺烨电子

700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

文件：2.35836 Mbytes 页数：9 Pages

SY

顺烨电子

700V N-Channel Planar MOSFET

Features RDSON≤ 0.65 Ω @ Vgs=10 V, Id= 7.5A gate Charge(typical typical53 nC) Crss (typical typical3.1pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply ( Power Factor Correction(PFC) (PFC)

文件：2.35836 Mbytes 页数：9 Pages

SY

顺烨电子

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 15A@ TC=25℃ ·Drain Source Voltage -VDSS= 700V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.45Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive

文件：321.87 Kbytes 页数：2 Pages

ISC

无锡固电