丝印：H18N65ANF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子

丝印：H18N65ANFT；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON=0.48Ω @Vgs=10V, Id=9A Low gate Charge(typical 52nC) Low Crss (typical 1.9pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：2.86126 Mbytes 页数：12 Pages

SY

顺烨电子