丝印：H1N；Package：LFCSP_VQ；Ultralow Distortion Current Feedback Differential ADC Driver

FEATURES Extremely low harmonic distortion −105 dBc HD2 at 10 MHz −91 dBc HD2 at 70 MHz −87 dBc HD2 at 100 MHz −103 dBc HD3 at 10 MHz −98 dBc HD3 at 70 MHz −89 dBc HD3 at 100 MHz Better distortion at higher gains than VF amplifiers Low input voltage noise: 1.4 nV/√Hz High speed −3 dB ba

文件：735.68 Kbytes 页数：25 Pages

AD

亚德诺

丝印：H1N；Package：LFCSP_VQ；Ultralow Distortion Current Feedback Differential ADC Driver

FEATURES Extremely low harmonic distortion −105 dBc HD2 at 10 MHz −91 dBc HD2 at 70 MHz −87 dBc HD2 at 100 MHz −103 dBc HD3 at 10 MHz −98 dBc HD3 at 70 MHz −89 dBc HD3 at 100 MHz Better distortion at higher gains than VF amplifiers Low input voltage noise: 1.4 nV/√Hz High speed −3 dB ba

文件：735.68 Kbytes 页数：25 Pages

AD

亚德诺

丝印：H1N；Package：LFCSP_VQ；Ultralow Distortion Current Feedback Differential ADC Driver

FEATURES Extremely low harmonic distortion −105 dBc HD2 at 10 MHz −91 dBc HD2 at 70 MHz −87 dBc HD2 at 100 MHz −103 dBc HD3 at 10 MHz −98 dBc HD3 at 70 MHz −89 dBc HD3 at 100 MHz Better distortion at higher gains than VF amplifiers Low input voltage noise: 1.4 nV/√Hz High speed −3 dB ba

文件：735.68 Kbytes 页数：25 Pages

AD

亚德诺

丝印：H1N65AD；Package：TO-252；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H1N65AF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H1N65AP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H1N65AU；Package：TO-251；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

丝印：H1N**；Package：SOT-25；LOW NOISE 150mA LDO REGULATOR

文件：510 Kbytes 页数：32 Pages

RICOH

理光

丝印：H1N**；Package：SOT-25；Supply Current Typ. 38uA

文件：524.09 Kbytes 页数：32 Pages

RICOH

理光

General Purpose Rectifiers

General Purpose Rectifiers Features •High Reliability •Low Cost •Low Leakage •Low forward voltage drop •High Current Capability •Glass Passivated Junction

文件：23.07 Kbytes 页数：2 Pages

HSMC

华昕