丝印：H1N65AU；Package：TO-251；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

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