丝印：H1N65AF；Package：TO-220F；650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 12 Ω @ Vgs=10 V, Id= 0.5A UltraLow gate Charge(typical typical5.7nC) Crss (typical typical0.87 pF) Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(

文件：2.80606 Mbytes 页数：11 Pages

SY

顺烨电子