丝印：H4N65AEP；Package：TO-220；650V N-Channel Planar MOSFET

Features RDSON≤ 2.6Ω @ Vgs=10 V, Id= 2A EMIand performance balanced Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (PFC) Charger

文件：2.59701 Mbytes 页数：10 Pages

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顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 2.6Ω @ Vgs=10 V, Id= 2A EMIand performance balanced Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (PFC) Charger

文件：2.59701 Mbytes 页数：10 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON≤ 2.6Ω @ Vgs=10 V, Id= 2A EMIand performance balanced Fast switching capability %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Correction(PFC) (PFC) Charger

文件：2.59701 Mbytes 页数：10 Pages

SY

顺烨电子

650V N-Channel Planar MOSFET

Features RDSON=1.95Ω @Vgs=10V, Id=2A Low gate Charge(typical 20.0nC) Low Crss (typical 4.1pF) Fast switching capability 100% avalanche tested Improved dv/dt capability Applications Switch Mode Power Supply Uninterruptible Power Supply (UPS) TV Power A dapter/Charger

文件：3.3421 Mbytes 页数：13 Pages

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顺烨电子