丝印：H7N70AP；Package：TO-220；700V N-Channel Planar MOSFET

Features RDSON≤ 1.55 Ω @ Vgs=10 V, Id= 3.5A Low gate Charge(typical typical25 .7nC) Low Crss (typical typical1.85 pF) Fast switching capability 100 %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Corr

文件：3.04878 Mbytes 页数：12 Pages

SY

顺烨电子

700V N-Channel Planar MOSFET

Features RDSON≤ 1.55 Ω @ Vgs=10 V, Id= 3.5A Low gate Charge(typical typical25 .7nC) Low Crss (typical typical1.85 pF) Fast switching capability 100 %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Corr

文件：3.04878 Mbytes 页数：12 Pages

SY

顺烨电子

700V N-Channel Planar MOSFET

Features RDSON≤ 1.55 Ω @ Vgs=10 V, Id= 3.5A Low gate Charge(typical typical25 .7nC) Low Crss (typical typical1.85 pF) Fast switching capability 100 %avalanche tested Improved dv/ dt capability Applications Switch Mode Power Supply ( Uninterruptible Power Supply(UPS) Power Factor Corr

文件：3.04878 Mbytes 页数：12 Pages

SY

顺烨电子

N-CHANNEL MOSFET

APPLICATIONS  High frequency switching mode power supply  Electronic ballast  UPS FEATURES Low gate charge Low Crss (typical 14pF ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product

文件：1.73658 Mbytes 页数：16 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

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