2SJ200

丝印：J200；Package：SC-65；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ200

Bipolar Small-Signal Transistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

2SJ200

isc P-Channel MOSFET Transistor

FEATURES ·DrainCurrent-ID=-10A@TC=25℃ ·DrainSourceVoltage-VDSS=-180V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.8Ω(Max)@VGS=-10V DESCRIPTION ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive.

2SJ200

丝印：J200；Package：SC-65；P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ200

Power MOSFET (P-ch single); Drain current ID -10 A \nPower Dissipation PD 120 W \nDrain-Source voltage VDSS -180 V \n;

Polarity：P-ch\nGeneration：π-MOSⅡ\nRoHS Compatible Product(s) (#)：Available\n

2SJ200

丝印：J200；Package：SC-65；High Power Amplifier Application

2SJ200-Y

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

HighPowerAmplifierApplication •Highbreakdownvoltage:VDSS=−180V •Highforwardtransferadmittance:|Yfs|=4.0S(typ.) •Complementaryto2SK1529

2SJ200_07

High Power Amplifier Application