丝印：J200；Package：SC-65；P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATION)

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：181.4 Kbytes 页数：3 Pages

TOSHIBA

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丝印：J200；Package：SC-65；TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：297.65 Kbytes 页数：5 Pages

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Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

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isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID=-10A@ TC=25℃ · Drain Source Voltage -VDSS= -180V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.8Ω(Max)@VGS= -10V DESCRIPTION · Motor Drive, DC-DC Converter, Power Switch and Solenoid Drive.

文件：313.92 Kbytes 页数：2 Pages

ISC

无锡固电

丝印：J200；Package：SC-65；High Power Amplifier Application

文件：426.58 Kbytes 页数：5 Pages

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Power MOSFET (P-ch single)

Polarity：P-ch\nGeneration：π-MOSⅡ\nRoHS Compatible Product(s) (#)：Available Drain current ID -10 A \nPower Dissipation PD 120 W \nDrain-Source voltage VDSS -180 V ;

Toshiba

东芝

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type

High Power Amplifier Application • High breakdown voltage : VDSS = −180 V • High forward transfer admittance : |Yfs| = 4.0 S (typ.) • Complementary to 2SK1529

文件：297.65 Kbytes 页数：5 Pages

TOSHIBA

东芝

High Power Amplifier Application

文件：426.58 Kbytes 页数：5 Pages

TOSHIBA

东芝