2N7002KU

NChannelMOSFET

2N7002KU

NChannelMOSFET

INTERFACEANDSWITCHINGAPPLICATION. FEATURES •ESDProtected2000V.(HumanBodyModel) •HighdensitycelldesignforlowRDS(ON). •Voltagecontrolledsmallsignalswitch. •SuffixU:QualifiedtoAEC-Q101. ex)2N7002KU-RTK/HU

2N7002KV

N-ChannelEnhancementModeFieldEffectTransistor

Features •HighdensitycelldesignforLowRDS(ON) •Voltagecontrolledsmallsignalswitch •Ruggedandreliable •Highsaturationcurrentcapability •ESDprotectedupto2KV •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequest

2N7002KV

Plastic-EncapsulateMOSFETS

FEATURE HighdensitycelldesignforLowRDS(on) Voltagecontrolledsmallsignalswitch Ruggedandreliable Highsaturationcurrentcapability ESDprotected APPLICATION LoadSwitchforPortableDevices DC/DCConverter

2N7002KV

N-ChannelEnhancementModePowerMOSFET

GeneralFeatures VDS=60V,ID=0.3A RDS(ON)

2N7002KW

60VN-ChannelEnhancementModeMOSFET-ESDProtected

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems,Solid-StateRelays Drivers

2N7002KW

N-ChSmallSignalMOSFETwithESDProtection

FEATURES •RDS(ON),VGS@10V,IDS@500mA=3Ω •RDS(ON),VGS@4.5V,IDS@200mA=4Ω •AdvancedTrenchProcessTechnology •HighDensityCellDesignForUltraLowOn-Resistance •VeryLowLeakageCurrentInOffCondition •SpeciallyDesignedforBatteryOperatedSystems, Solid-StateRelaysDriver

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

ProductSummary ●VDS60V ●ID340mA ●RDS(ON)(atVGS=10V)

2N7002KW

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •PbFree/RoHSCompliant •ESDHBM=1000VasperJESD22A114andESDCDM=1500VasperJESD22C101

2N7002KW

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21Definition •LowOn-Resistance:2Ω •LowThreshold:2V(typ.) •LowInputCapacitance:25pF •FastSwitchingSpeed:25ns •LowInputandOutputLeakage •TrenchFET®PowerMOSFET •1200VESDProtection •ComplianttoRoHSDirective20