2N7002PW

60V,0.3AN-channelTrenchMOSFET

Generaldescription N-channelenhancementmodeField-EffectTransistor(FET)inaverysmallSOT323(SC-70)Surface-MountedDevice(SMD)plasticpackageusingTrenchMOSFETtechnology. Featuresandbenefits ●Logic-levelcompatible ●Veryfastswitching ●TrenchMOSFETtechnology ●AEC-Q101

2N7002PW

N-Channel60-V(D-S)MOSFET

2N7002Q

60VN-ChannelEnhancementModeMOSFET

Description ●TrenchPowerMVMOSFETtechnology ●Voltagecontrolledsmallsignalswitch ●LowinputCapacitance ●FastSwitchingSpeed ●LowInput/OutputLeakage GeneralFeatures ●VDS60V ●ID300mA ●RDS(ON)(atVGS=10V)

2N7002Q

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features LowOn-Resistance LowGateThresholdVoltage LowInputCapacitance FastSwitchingSpeed SmallSurfaceMountPackage TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Notes3) The2N7002Qissuitableforautomotiveapplicationsrequir

2N7002S

SURFACEMOUNTDualN-ChannelEnhancementMOSFET/VOLTAGE60VoltsCURRENT0.250Ampere

[CHENMKO] FEATURE *Smallsurfacemountingtype.(SC-88/SOT-363) *HighdensitycelldesignforlowRDS(ON). *Suitableforhighpackingdensity. *Ruggedandreliable. *Highsaturationcurrentcapability. *Voltagecontrolledsmallsignalswitch. APPLICATION *Servomotorcontrol. *Po

2N7002SPT

DualN-ChannelEnhancementMOSFET

2N7002SSPT

DualN-ChannelEnhancementMOSFET

2N7002T

N-ChannelENHANCEMENTMODEPOWERMOSFET

FEATURES: *FastSwitchingSpeed *LowOn-Resistance *LowVoltageDriver APPLICATIONS: *Drivers:Relays,Solenoids,Lamps,Hammers,Displays,Memories *BatteryOperatedSystems *PowerSupplyConverterCircuits *Load/PowerSwitchingCellPhones,Pagers

2N7002T

SmallSignalMOSFET

FEATURES ●HighdensitycelldesignforlowRDS(ON). ●Voltagecontrolledsmallsignalswitch. ●Ruggedandreliable. ●Highsaturationcurrentcapability.

2N7002T

N-ChannelEnhancementModeFieldEffectTransistor

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant

2N7002T

Plastic-EncapsulatedTransistors

FEATURES Powerdissipation PD:0.15W(Tamb=25℃) Collectorcurrent ID:115mA Collector-basevoltage VDS:60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisnewgenerationMOSFEThasbeendesignedtominimizetheonstateresistance(RDS(on))andyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagement applications. •DC-DCConverters •Powermanagementfunctions •Battery

2N7002T

300mAmps,60VoltsN-CHANNELPOWERMOSFET

DESCRIPTION TheUTC2N7002Thasbeendesignedtominimizeon-stateresistancewhileproviderugged,reliable,andfastswitchingperformance.Itcanbeusedinmostapplicationsrequiringupto400mADCandcandeliverpulsedcurrentsupto2A.Theproductisparticularlysuitedforlowvoltage,

2N7002T

N-ChannelEnhancementMOSFET

2N7002T

N-ChannelPlastic-EncapsulateTransistor

Features •LeadFreeFinish/RoHSCompliant(PSuffixdesignates RoHSCompliant.Seeorderinginformation) •LowON-ResistanceandlowInputCapacitance •LowGateThresholdVoltage •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •AvailableinLead

2N7002T

SmallSignalMOSFETTransistor

FEATURES ●Lowon-resistance. ●Lowgatethresholdvoltge. ●Lowinputcapacitance. ●Fastswitchingspeed. ●Lowinput/outputleakage. APPLICATIONS ●N-channelenhancementmodeeffecttransistor. ●Switchingapplication.

2N7002T

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •LowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFree/RoHSCompliant(Note2) •QualifiedtoAEC-Q101StandardsforHighReliability •GreenDevice(Notes3and4)

2N7002T

MOSFET(N-Channel)

MOSFET(N-Channel) FEATURE ●HighdensitycelldesignforlowRDS(ON) ●Voltagecontrolledsmallsignalswitch ●Ruggedandreliable ●Highsaturationcurrentcapability APPLICATION ●LoadSwitchforPortableDevices ●DC/DCConverter

2N7002T

N-ChannelMOSFET

■Features ●VDS(V)=60V ●ID=115mA ●RDS(ON)