丝印：X8-；Package：SOT-323；60 V, 0.3 A N-channel Trench MOSFET

General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. Features and benefits ● Logic-level compatible ● Very fast switching ● Trench MOSFET technology ● AEC-Q101

文件：173.23 Kbytes 页数：16 Pages

恩XP

丝印：X8；Package：SC-70；60 V, 310 mA N-channel Trench MOSFET

1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Logic-level compatible • Very fast switching • Trench MOSFET technology •

文件：282.79 Kbytes 页数：15 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：72Kc；Package：SOT-323；N-Channel Enhancement Mode MOSFET

Features Low on-resistance ESD protected gate up to 2kV HBM High-speed switching Drive circuits can be simple Parallel use is easy

文件：1.83344 Mbytes 页数：5 Pages

TECHPUBLIC

台舟电子

N-Channel 60-V (D-S) MOSFET

文件：1.01359 Mbytes 页数：8 Pages

VBSEMI

微碧半导体

MOSFETs (Field Effect Transistors)

Diotec

德欧泰克